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SI5933DC-T1-E3 VISHAY


Hersteller: VISHAY

auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
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Technische Details SI5933DC-T1-E3 VISHAY

Description: MOSFET 2P-CH 20V 2.7A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.7A, Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™.

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SI5933DC-T1-E3 Hersteller : VISHAY SSOP8
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SI5933DC-T1-E3 SI5933DC-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar
SI5933DC-T1-E3 SI5933DC-T1-E3 Hersteller : Vishay Siliconix Description: MOSFET 2P-CH 20V 2.7A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Produkt ist nicht verfügbar