Produkte > VISHAY SILICONIX > SI5935CDC-T1-GE3
SI5935CDC-T1-GE3

SI5935CDC-T1-GE3 Vishay Siliconix


Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4A 1206-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.4 EUR
9000+ 0.37 EUR
Mindestbestellmenge: 3000
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Technische Details SI5935CDC-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 20V 4A 1206-8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4A, Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 1206-8 ChipFET™, Part Status: Active.

Weitere Produktangebote SI5935CDC-T1-GE3 nach Preis ab 0.48 EUR bis 1.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Hersteller : Vishay Siliconix Description: MOSFET 2P-CH 20V 4A 1206-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 1206-8 ChipFET™
Part Status: Active
auf Bestellung 11398 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.08 EUR
100+ 0.75 EUR
500+ 0.58 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Hersteller : Vishay Semiconductors si5935cdc-1764867.pdf MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
auf Bestellung 59800 Stücke:
Lieferzeit 314-328 Tag (e)
Anzahl Preis ohne MwSt
34+1.53 EUR
40+ 1.31 EUR
100+ 0.98 EUR
500+ 0.76 EUR
Mindestbestellmenge: 34
SI5935CDC-T1-GE3 SI5935CDC-T1-GE3 Hersteller : Vishay si5935cdc.pdf Trans MOSFET P-CH 20V 4A 8-Pin Chip FET T/R
Produkt ist nicht verfügbar
SI5935CDC-T1-GE3 Hersteller : VISHAY Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SI5935CDC-T1-GE3 Hersteller : VISHAY Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4A; Idm: -10A; 2W; ChipFET
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -10A
Power dissipation: 2W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 100mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar