Produkte > VISHAY SILICONIX > SI6415DQ-T1-GE3
SI6415DQ-T1-GE3

SI6415DQ-T1-GE3 Vishay Siliconix


si6415dq.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.92 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI6415DQ-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 6.5A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-TSSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V.

Weitere Produktangebote SI6415DQ-T1-GE3 nach Preis ab 2.02 EUR bis 4.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Hersteller : Vishay Siliconix si6415dq.pdf Description: MOSFET P-CH 30V 6.5A 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-TSSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
auf Bestellung 5069 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.26 EUR
10+ 3.53 EUR
100+ 2.81 EUR
500+ 2.38 EUR
1000+ 2.02 EUR
Mindestbestellmenge: 7
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Hersteller : Vishay Semiconductors si6415dq.pdf MOSFET 30V 6.5A 1.5W 19mohm @ 10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.55 EUR
13+ 4.08 EUR
100+ 3.3 EUR
500+ 2.7 EUR
1000+ 2.23 EUR
3000+ 2.13 EUR
Mindestbestellmenge: 12
SI6415DQ-T1-GE3 SI6415DQ-T1-GE3 Hersteller : Vishay 70639.pdf Trans MOSFET P-CH 30V 6.5A 8-Pin TSSOP T/R
Produkt ist nicht verfügbar
SI6415DQ-T1-GE3 Hersteller : VISHAY si6415dq.pdf SI6415DQ-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar