SI6423ADQ-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET PCH 20V 10.3/12.5A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-TSSOP
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.9 EUR |
| 6000+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI6423ADQ-T1-GE3 Vishay Siliconix
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc), Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V, Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V.
Weitere Produktangebote SI6423ADQ-T1-GE3 nach Preis ab 0.88 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI6423ADQ-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET PCH 20V 10.3/12.5A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
SI6423ADQ-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 20V P-CHANNEL (D-S) |
auf Bestellung 38143 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| SI6423ADQ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10.3A T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
 |
SI6423ADQ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10.3A T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI6423ADQ-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10.3A T/R |
Produkt ist nicht verfügbar |