Technische Details Si6967DQ-T1-E3 VISHAY
Description: MOSFET 2P-CH 8V 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 8-TSSOP.
Weitere Produktangebote Si6967DQ-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| Si6967DQ-T1-E3 | Hersteller : VISHAY | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si6967DQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 8V 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 8-TSSOP |
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