SI6968BEDQ-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.36 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.64 EUR |
| 3000+ | 0.58 EUR |
| 6000+ | 0.53 EUR |
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Technische Details SI6968BEDQ-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP, Supplier Device Package: 8-TSSOP, Vgs(th) (Max) @ Id: 1.6V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-TSSOP (0.173", 4.40mm Width), Packaging: Tape & Reel (TR), Part Status: Active.
Weitere Produktangebote SI6968BEDQ-T1-E3 nach Preis ab 0.95 EUR bis 2.16 EUR
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SI6968BEDQ-T1-E3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 20V 5.2A 8TSSOPPart Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1.6V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI6968BEDQ-T1-E3 | VISHAY |
09+ |
auf Bestellung 11949 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI6968BEDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.6V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 1.6V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.38 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 0.95 EUR |
| SI6968BEDQ-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 11949 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH