SI6968BEDQ-T1-E3 Vishay Semiconductors
auf Bestellung 138283 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.25 EUR |
| 27+ | 1.98 EUR |
| 100+ | 1.35 EUR |
| 500+ | 1.21 EUR |
| 6000+ | 1.19 EUR |
| 9000+ | 1.16 EUR |
| 24000+ | 1.14 EUR |
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Technische Details SI6968BEDQ-T1-E3 Vishay Semiconductors
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A, Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.6V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Active.
Weitere Produktangebote SI6968BEDQ-T1-E3 nach Preis ab 1.41 EUR bis 3.2 EUR
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SI6968BEDQ-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2N-CH 20V 5.2A 8TSSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
auf Bestellung 2024 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
07+ SOP16 |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 11949 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
MSOP8 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI6968BEDQ-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 5.2A 8-Pin TSSOP T/R |
Produkt ist nicht verfügbar |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI6968BEDQ-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 5.2A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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| SI6968BEDQ-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 6.5A; Idm: 30A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Pulsed drain current: 30A Power dissipation: 1.5W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |