SI7104DN-T1-E3

SI7104DN-T1-E3

SI7104DN-T1-E3

Hersteller: Vishay Semiconductors
MOSFET 12V 35A
73406-1211377.pdf
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Technische Details SI7104DN-T1-E3

Description: MOSFET N-CH 12V 35A PPAK 1212-8, Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 52W.

Preis SI7104DN-T1-E3 ab 0 EUR bis 0 EUR

SI7104DN-T1-E3
SI7104DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 35A PPAK 1212-8
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 52W
si7104dn.pdf
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