SI7104DN-T1-E3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2078 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2078 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SI7104DN-T1-E3
Description: MOSFET N-CH 12V 35A PPAK 1212-8, Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET N-Channel, Metal Oxide, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 52W.
Preis SI7104DN-T1-E3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 35A PPAK 1212-8 Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 26.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 12V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 52W 
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