SI7106DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 12.5A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.49 EUR |
| 6000+ | 1.42 EUR |
| 9000+ | 1.36 EUR |
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Technische Details SI7106DN-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 20V 12.5A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V.
Weitere Produktangebote SI7106DN-T1-E3 nach Preis ab 1.59 EUR bis 3.64 EUR
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SI7106DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 12.5A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V |
auf Bestellung 23735 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7106DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 |
auf Bestellung 6792 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI7106DN-T1-E3 |
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auf Bestellung 2680 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7106DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A Mounting: SMD Drain-source voltage: 20V Drain current: 19.5A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7106DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 19.5A; Idm: 60A Mounting: SMD Drain-source voltage: 20V Drain current: 19.5A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 27nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |