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SI7112DN-T1-GE3

SI7112DN-T1-GE3 Vishay Siliconix


si7112dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 9000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.9 EUR
6000+ 1.83 EUR
Mindestbestellmenge: 3000
Produktrezensionen
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Technische Details SI7112DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 11.3A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V.

Weitere Produktangebote SI7112DN-T1-GE3 nach Preis ab 2.04 EUR bis 4.13 EUR

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SI7112DN-T1-GE3 SI7112DN-T1-GE3 Hersteller : Vishay Semiconductors si7112dn.pdf MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.06 EUR
15+ 3.67 EUR
100+ 2.94 EUR
500+ 2.42 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 13
SI7112DN-T1-GE3 SI7112DN-T1-GE3 Hersteller : Vishay Siliconix si7112dn.pdf Description: MOSFET N-CH 30V 11.3A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17.8A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 14391 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.13 EUR
10+ 3.73 EUR
100+ 3 EUR
500+ 2.46 EUR
1000+ 2.04 EUR
Mindestbestellmenge: 7
SI7112DN-T1-GE3 Hersteller : VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7112DN-T1-GE3 Hersteller : VISHAY si7112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 17.8A; Idm: 60A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.8A
Pulsed drain current: 60A
Power dissipation: 3.8W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar