Produkte > VISHAY SILICONIX > SI7114DN-T1-E3
SI7114DN-T1-E3

SI7114DN-T1-E3 Vishay Siliconix


si7114dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
auf Bestellung 6000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.82 EUR
6000+ 1.75 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI7114DN-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 30V 11.7A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V.

Weitere Produktangebote SI7114DN-T1-E3 nach Preis ab 1.92 EUR bis 5.54 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI7114DN-T1-E3 SI7114DN-T1-E3 Hersteller : Vishay Siliconix si7114dn.pdf Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
auf Bestellung 9901 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
10+ 3.35 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
SI7114DN-T1-E3 SI7114DN-T1-E3 Hersteller : Vishay Semiconductors si7114dn-1766091.pdf MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V
auf Bestellung 17506 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.54 EUR
11+ 4.99 EUR
100+ 4 EUR
500+ 3.3 EUR
1000+ 2.73 EUR
3000+ 2.54 EUR
Mindestbestellmenge: 10
SI7114DN-T1-E3 Hersteller : VISHAY si7114dn.pdf 08+
auf Bestellung 1310 Stücke:
Lieferzeit 21-28 Tag (e)
SI7114DN-T1-E3 Hersteller : VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7114DN-T1-E3 Hersteller : VISHAY si7114dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A
Mounting: SMD
Power dissipation: 3.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 18.3A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar