SI7114DN-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Description: MOSFET N-CH 30V 11.7A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.82 EUR |
6000+ | 1.75 EUR |
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Technische Details SI7114DN-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V.
Weitere Produktangebote SI7114DN-T1-E3 nach Preis ab 1.92 EUR bis 5.54 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7114DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 11.7A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18.3A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V |
auf Bestellung 9901 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7114DN-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 30V 18.3A 3.8W 7.5mohm @ 10V |
auf Bestellung 17506 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7114DN-T1-E3 | Hersteller : VISHAY | 08+ |
auf Bestellung 1310 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7114DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7114DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 18.3A; Idm: 60A Mounting: SMD Power dissipation: 3.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Case: PowerPAK® 1212-8 Drain-source voltage: 30V Drain current: 18.3A On-state resistance: 10mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |