SI7117DN-T1-E3

SI7117DN-T1-E3

Hersteller: VISHAY
09+
si7117dn.pdf
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Technische Details SI7117DN-T1-E3

Description: MOSFET P-CH 150V 2.17A 1212-8, Package / Case: PowerPAK® 1212-8, Supplier Device Package: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc), Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Part Status: Active, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 150V.

Preis SI7117DN-T1-E3 ab 0 EUR bis 0 EUR

SI7117DN-T1-E3
SI7117DN-T1-E3
Hersteller: Vishay
Trans MOSFET P-CH 150V 1.1A 8-Pin PowerPAK 1212 T/R
si7117dn.pdf
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SI7117DN-T1-E3
SI7117DN-T1-E3
Hersteller: Vishay / Siliconix
MOSFET -150V Vds 20V Vgs PowerPAK 1212-8
si7117dn-241288.pdf
auf Bestellung 4917 Stücke
Lieferzeit 14-28 Tag (e)
SI7117DN-T1-E3
SI7117DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A 1212-8
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
si7117dn.pdf
auf Bestellung 12008 Stücke
Lieferzeit 21-28 Tag (e)
SI7117DN-T1-E3
SI7117DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
si7117dn.pdf
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
SI7117DN-T1-E3
SI7117DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 2.17A 1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 2.17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Power Dissipation (Max): 3.2W (Ta), 12.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7117
si7117dn.pdf
auf Bestellung 11008 Stücke
Lieferzeit 21-28 Tag (e)