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SI7157DP-T1-GE3

SI7157DP-T1-GE3 Vishay Semiconductors


si7157dp.pdf Hersteller: Vishay Semiconductors
MOSFET -20V Vds 12V Vgs PowerPAK SO-8
auf Bestellung 26998 Stücke:

Lieferzeit 441-455 Tag (e)
Anzahl Preis ohne MwSt
14+3.82 EUR
16+ 3.41 EUR
100+ 2.65 EUR
500+ 2.19 EUR
1000+ 1.84 EUR
3000+ 1.81 EUR
Mindestbestellmenge: 14
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Technische Details SI7157DP-T1-GE3 Vishay Semiconductors

Description: MOSFET P-CH 20V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V.

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SI7157DP-T1-GE3
Produktcode: 148717
si7157dp.pdf Verschiedene Bauteile > Other components 3
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SI7157DP-T1-GE3 Hersteller : VISHAY si7157dp.pdf SI7157DP-T1-GE3 SMD P channel transistors
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SI7157DP-T1-GE3 SI7157DP-T1-GE3 Hersteller : Vishay si7157dp.pdf Trans MOSFET P-CH 20V 60A 8-Pin PowerPAK SO EP T/R
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SI7157DP-T1-GE3 SI7157DP-T1-GE3 Hersteller : Vishay si7157dp.pdf Trans MOSFET P-CH 20V 60A 8-Pin PowerPAK SO EP T/R
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SI7157DP-T1-GE3 SI7157DP-T1-GE3 Hersteller : Vishay Siliconix si7157dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V
Produkt ist nicht verfügbar
SI7157DP-T1-GE3 SI7157DP-T1-GE3 Hersteller : Vishay Siliconix si7157dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 625 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22000 pF @ 10 V
Produkt ist nicht verfügbar