SI7196DP-T1-GE3

SI7196DP-T1-GE3

SI7196DP-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.6W
Input Capacitance (Ciss) (Max) @ Vds: 1577pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Supplier Device Package: PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide

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Technische Details SI7196DP-T1-GE3

Description: MOSFET N-CH 30V 16A PPAK SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 41.6W, Input Capacitance (Ciss) (Max) @ Vds: 1577pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Supplier Device Package: PowerPAK® SO-8, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide.

Preis SI7196DP-T1-GE3 ab 0 EUR bis 0 EUR

SI7196DP-T1-GE3
SI7196DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.6W
Input Capacitance (Ciss) (Max) @ Vds: 1577pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
si7196dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7196DP-T1-GE3
SI7196DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 16A PPAK SO-8
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 41.6W
Input Capacitance (Ciss) (Max) @ Vds: 1577pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
si7196dp.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen