SI7252DP-T1-GE3 Vishay Semiconductors
auf Bestellung 34836 Stücke:
Lieferzeit 566-580 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 5.33 EUR |
| 11+ | 4.76 EUR |
| 100+ | 3.85 EUR |
| 500+ | 3.17 EUR |
| 1000+ | 2.86 EUR |
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Technische Details SI7252DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 46W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 36.7A, Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V, Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual, Part Status: Active.
Weitere Produktangebote SI7252DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7252DP-T1-GE3 Produktcode: 122330 |
 IC > IC andere |
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| SI7252DP-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7252DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7252DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7252DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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SI7252DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 46W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 36.7A Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |
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| SI7252DP-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 29.2A Pulsed drain current: 80A Power dissipation: 29W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |