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SI7308DN-T1-GE3

SI7308DN-T1-GE3 Vishay Siliconix

si7308dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 8067 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.13 EUR
6000+ 1.07 EUR
Mindestbestellmenge: 3000
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Technische Details SI7308DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V.

Weitere Produktangebote SI7308DN-T1-GE3 nach Preis ab 1.2 EUR bis 2.73 EUR

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SI7308DN-T1-GE3 SI7308DN-T1-GE3 Hersteller : Vishay Siliconix si7308dn.pdf Description: MOSFET N-CH 60V 6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 15 V
auf Bestellung 9309 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
12+ 2.23 EUR
100+ 1.73 EUR
500+ 1.47 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 10
SI7308DN-T1-GE3 SI7308DN-T1-GE3 Hersteller : Vishay Semiconductors si7308dn.pdf MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 39581 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.73 EUR
24+ 2.2 EUR
100+ 1.71 EUR
500+ 1.48 EUR
1000+ 1.28 EUR
Mindestbestellmenge: 20
SI7308DN-T1-GE3 Hersteller : VISHAY si7308dn.pdf SI7308DN-T1-GE3 SMD N channel transistors
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