Produkte > VISHAY SILICONIX > SI7309DN-T1-GE3
SI7309DN-T1-GE3

SI7309DN-T1-GE3 Vishay Siliconix


si7309dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.99 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI7309DN-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 60V 8A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V.

Weitere Produktangebote SI7309DN-T1-GE3 nach Preis ab 1.04 EUR bis 2.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI7309DN-T1-GE3 SI7309DN-T1-GE3 Hersteller : Vishay Siliconix si7309dn.pdf Description: MOSFET P-CH 60V 8A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 3.9A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 30 V
auf Bestellung 4978 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.39 EUR
14+ 1.96 EUR
100+ 1.53 EUR
500+ 1.29 EUR
1000+ 1.05 EUR
Mindestbestellmenge: 11
SI7309DN-T1-GE3 SI7309DN-T1-GE3 Hersteller : Vishay Semiconductors si7309dn.pdf MOSFET -60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 53676 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.42 EUR
27+ 1.98 EUR
100+ 1.54 EUR
500+ 1.31 EUR
1000+ 1.06 EUR
3000+ 1.04 EUR
Mindestbestellmenge: 22
SI7309DN-T1-GE3 SI7309DN-T1-GE3 Hersteller : VISHAY VISH-S-A0001112956-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: VISHAY - SI7309DN-T1-GE3 - Leistungs-MOSFET, TrenchFET, p-Kanal, 60 V, 8 A, 0.092 ohm, PowerPAK 1212, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 19.8W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.092ohm
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
SI7309DN-T1-GE3 Hersteller : VISHAY si7309dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 19.8W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -8A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 146mΩ
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7309DN-T1-GE3 Hersteller : VISHAY si7309dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8A; Idm: -20A
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: -20A
Power dissipation: 19.8W
Gate charge: 22nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -8A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 146mΩ
Produkt ist nicht verfügbar