SI7315DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 150V 8.9A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc)
Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.21 EUR |
| 6000+ | 1.15 EUR |
| 9000+ | 1.1 EUR |
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Technische Details SI7315DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 150V 8.9A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc), Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V.
Weitere Produktangebote SI7315DN-T1-GE3 nach Preis ab 1.28 EUR bis 2.91 EUR
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SI7315DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 8.9A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.9A (Tc) Rds On (Max) @ Id, Vgs: 315mOhm @ 2.4A, 10V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 75 V |
auf Bestellung 12557 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7315DN-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8 |
auf Bestellung 26214 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7315DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7315DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -10A; 33W Kind of package: reel; tape Mounting: SMD Pulsed drain current: -10A Power dissipation: 33W Gate charge: 30nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhanced Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±30V Case: PowerPAK® 1212-8 On-state resistance: 315mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7315DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -8.9A; Idm: -10A; 33W Kind of package: reel; tape Mounting: SMD Pulsed drain current: -10A Power dissipation: 33W Gate charge: 30nC Polarisation: unipolar Drain current: -8.9A Kind of channel: enhanced Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±30V Case: PowerPAK® 1212-8 On-state resistance: 315mΩ |
Produkt ist nicht verfügbar |