SI7317DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 150V 2.8A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.12 EUR |
| 6000+ | 1.06 EUR |
| 9000+ | 1.01 EUR |
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Technische Details SI7317DN-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 150V 2.8A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V.
Weitere Produktangebote SI7317DN-T1-GE3 nach Preis ab 0.61 EUR bis 2.68 EUR
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SI7317DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 150V 2.8A 8-Pin PowerPAK EP |
auf Bestellung 2720 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7317DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 150V 2.8A 8-Pin PowerPAK EP |
auf Bestellung 2764 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7317DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 150V 2.8A 8-Pin PowerPAK EP |
auf Bestellung 2720 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7317DN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -150V Vds 30V Vgs PowerPAK 1212-8 |
auf Bestellung 33122 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7317DN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 2.8A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 75 V |
auf Bestellung 22397 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7317DN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 150V 2.8A 8-Pin PowerPAK EP |
auf Bestellung 2974 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7317DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A Mounting: SMD Case: PowerPAK® 1212-8 Polarisation: unipolar Power dissipation: 19.8W Kind of package: reel; tape Gate charge: 9.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -2A Drain-source voltage: -150V Drain current: -2.8A On-state resistance: 1.3Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI7317DN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.8A; Idm: -2A Mounting: SMD Case: PowerPAK® 1212-8 Polarisation: unipolar Power dissipation: 19.8W Kind of package: reel; tape Gate charge: 9.8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: -2A Drain-source voltage: -150V Drain current: -2.8A On-state resistance: 1.3Ω Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |