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SI7322DN-T1-E3

SI7322DN-T1-E3 Vishay Siliconix


si7322dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18A PPAK 1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
auf Bestellung 15000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.64 EUR
6000+ 1.56 EUR
9000+ 1.49 EUR
Mindestbestellmenge: 3000
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Technische Details SI7322DN-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 100V 18A PPAK 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V.

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SI7322DN-T1-E3 SI7322DN-T1-E3 Hersteller : Vishay Siliconix si7322dn.pdf Description: MOSFET N-CH 100V 18A PPAK 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.5A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 50 V
auf Bestellung 19137 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.95 EUR
10+ 3.24 EUR
100+ 2.52 EUR
500+ 2.14 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
SI7322DN-T1-E3 SI7322DN-T1-E3 Hersteller : Vishay Semiconductors si7322dn.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 78113 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
16+ 3.28 EUR
100+ 2.54 EUR
500+ 2.15 EUR
1000+ 1.75 EUR
3000+ 1.55 EUR
Mindestbestellmenge: 14
SI7322DN-T1-E3 Hersteller : Vishay / Siliconix si7322dn-240991.pdf MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 2589 Stücke:
Lieferzeit 14-28 Tag (e)