SI7411DN-T1-E3

SI7411DN-T1-E3

Hersteller:

72399.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
3000 Stücke

Technische Details SI7411DN-T1-E3

Description: MOSFET P-CH 20V 7.5A 1212-8, Supplier Device Package: PowerPAK® 1212-8, FET Type: MOSFET P-Channel, Metal Oxide, Vgs(th) (Max) @ Id: 1V @ 300µA, Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1.5W, Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Drain to Source Voltage (Vdss): 20V, Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V.

Preis SI7411DN-T1-E3 ab 0 EUR bis 0 EUR

SI7411DN-T1-E3
Hersteller: VISHAY
09+
72399.pdf
1106 Stücke
SI7411DN-T1-E3
SI7411DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Supplier Device Package: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Vgs(th) (Max) @ Id: 1V @ 300µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
72399.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7411DN-T1-E3
SI7411DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 1V @ 300µA
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
72399.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7411DN-T1-E3
SI7411DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A 1212-8
Rds On (Max) @ Id, Vgs: 19 mOhm @ 11.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 300µA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
72399.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen