SI7414DN-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 5.6A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
auf Bestellung 122 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.59 EUR |
| 10+ | 2.97 EUR |
| 100+ | 2.36 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7414DN-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 5.6A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V.
Weitere Produktangebote SI7414DN-T1-E3 nach Preis ab 1.88 EUR bis 3.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI7414DN-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 49849 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
SI7414DN-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI7414DN-T1-E3 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.021 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 5.6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 1.5W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.021ohm |
auf Bestellung 1953 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SI7414DN-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI7414DN-T1-E3 - Leistungs-MOSFET, n-Kanal, 60 V, 5.6 A, 0.021 ohm, PowerPAK 1212, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 1.5 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.021 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| SI7414DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.6A; Idm: 30A; 0.8W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.6A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
SI7414DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 5.6A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 8.7A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
| SI7414DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.6A; Idm: 30A; 0.8W Kind of package: reel; tape Drain-source voltage: 60V Drain current: 5.6A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 25nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 30A Mounting: SMD Case: PowerPAK® 1212-8 |
Produkt ist nicht verfügbar |