SI7431DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 200V 2.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 4.6 EUR |
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Technische Details SI7431DP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 200V 2.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V.
Weitere Produktangebote SI7431DP-T1-GE3 nach Preis ab 4.6 EUR bis 9.44 EUR
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SI7431DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 45879 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7431DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 2.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 174mOhm @ 3.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V |
auf Bestellung 6982 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7431DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 200V 2.2A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI7431DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.2A; Idm: -30A; 1.2W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain current: -2.2A Drain-source voltage: -200V Power dissipation: 1.2W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A On-state resistance: 174mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7431DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.2A; Idm: -30A; 1.2W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Drain current: -2.2A Drain-source voltage: -200V Power dissipation: 1.2W Polarisation: unipolar Gate charge: 135nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A On-state resistance: 174mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |