SI7434DP-T1-GE3 Vishay Semiconductors
auf Bestellung 7252 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.31 EUR |
| 10+ | 6.14 EUR |
| 100+ | 4.99 EUR |
| 500+ | 4.42 EUR |
| 1000+ | 3.85 EUR |
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Technische Details SI7434DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 250V 2.3A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V.
Weitere Produktangebote SI7434DP-T1-GE3 nach Preis ab 6.01 EUR bis 8.16 EUR
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SI7434DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 250V 2.3A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
auf Bestellung 472 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7434DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3.8A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 250V Drain current: 3.8A On-state resistance: 162mΩ Type of transistor: N-MOSFET Power dissipation: 8.4W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7434DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 250V 2.3A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.8A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI7434DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 250V; 3.8A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 250V Drain current: 3.8A On-state resistance: 162mΩ Type of transistor: N-MOSFET Power dissipation: 8.4W Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |