auf Bestellung 1325 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 2.82 EUR |
| 61+ | 2.38 EUR |
| 62+ | 2.27 EUR |
| 100+ | 2 EUR |
| 250+ | 1.8 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.6 EUR |
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Technische Details SI7450DP-T1-GE3 Vishay
Description: MOSFET N-CH 200V 3.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V.
Weitere Produktangebote SI7450DP-T1-GE3 nach Preis ab 1.6 EUR bis 6.99 EUR
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SI7450DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 1325 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7450DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 3.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
auf Bestellung 2854 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7450DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 16655 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7450DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 4477 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7450DP-T1-GE3 Produktcode: 86304 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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| SI7450DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.2A; Idm: 40A; 1.2W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Application: automotive industry Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 200V Drain current: 3.2A On-state resistance: 80mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7450DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 3.2A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI7450DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.2A; Idm: 40A; 1.2W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.2W Application: automotive industry Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Drain-source voltage: 200V Drain current: 3.2A On-state resistance: 80mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |