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SI7454DP-T1-E3

SI7454DP-T1-E3 Vishay Siliconix

71618.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+2.06 EUR
6000+ 1.98 EUR
9000+ 1.92 EUR
Mindestbestellmenge: 3000
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Technische Details SI7454DP-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 100V 5A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V.

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SI7454DP-T1-E3 SI7454DP-T1-E3 Hersteller : Vishay Siliconix 71618.pdf Description: MOSFET N-CH 100V 5A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 7.8A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 21887 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.55 EUR
10+ 3.8 EUR
100+ 3.02 EUR
500+ 2.56 EUR
1000+ 2.17 EUR
Mindestbestellmenge: 6
SI7454DP-T1-E3 SI7454DP-T1-E3 Hersteller : Vishay Semiconductors 71618.pdf MOSFET 100V 40MOHMS@4.5V
auf Bestellung 7651 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.89 EUR
12+ 4.39 EUR
100+ 3.54 EUR
500+ 2.91 EUR
1000+ 2.41 EUR
Mindestbestellmenge: 11
SI7454DP-T1-E3 Hersteller : VISHAY 71618.pdf SI7454DP-T1-E3 SMD N channel transistors
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