SI7456CDP-T1-GE3

SI7456CDP-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
si7456cd.pdf si7456cd.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2983 Stücke
Lieferzeit 14-21 Tag (e)

144+ 1.01 EUR
250+ 0.97 EUR
500+ 0.93 EUR
1000+ 0.89 EUR

Technische Details SI7456CDP-T1-GE3

Description: MOSFET N-CH 100V 27.5A PPAK SO-8, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 35.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI7456CDP-T1-GE3 ab 0.89 EUR bis 1.01 EUR

SI7456CDP-T1-GE3
SI7456CDP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V 27.5A 35.7W
VISHS75480_1-2566222.pdf
auf Bestellung 8143 Stücke
Lieferzeit 14-28 Tag (e)
SI7456CDP-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
si7456cd.pdf si7456cd.pdf
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SI7456CDP-T1-GE3
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si7456cd.pdf
auf Bestellung 8972 Stücke
Lieferzeit 21-28 Tag (e)
SI7456CDP-T1-GE3
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: SI7456
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
si7456cd.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI7456CDP-T1-GE3
SI7456CDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 27.5A PPAK SO-8
Base Part Number: SI7456
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 5W (Ta), 35.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
si7456cd.pdf
auf Bestellung 7478 Stücke
Lieferzeit 21-28 Tag (e)