auf Bestellung 27000 Stücke:
Lieferzeit 628-642 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.11 EUR |
| 15+ | 3.69 EUR |
| 100+ | 2.96 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.01 EUR |
| 3000+ | 1.87 EUR |
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Technische Details SI7456CDP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 100V 27.5A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc), Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V.
Weitere Produktangebote SI7456CDP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI7456CDP-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.5A; Idm: 50A Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 27.5A On-state resistance: 31.5mΩ Type of transistor: N-MOSFET Power dissipation: 35.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7456CDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7456CDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7456CDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 27.5A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V |
Produkt ist nicht verfügbar |
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SI7456CDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 27.5A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 50 V |
Produkt ist nicht verfügbar |
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| SI7456CDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 27.5A; Idm: 50A Case: PowerPAK® SO8 Drain-source voltage: 100V Drain current: 27.5A On-state resistance: 31.5mΩ Type of transistor: N-MOSFET Power dissipation: 35.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD |
Produkt ist nicht verfügbar |