SI7456CDP-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2983 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 2983 Stücke
Lieferzeit 14-21 Tag (e)
Technische Details SI7456CDP-T1-GE3
Description: MOSFET N-CH 100V 27.5A PPAK SO-8, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 5W (Ta), 35.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, Vgs(th) (Max) @ Id: 2.8V @ 250µA, Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).
Preis SI7456CDP-T1-GE3 ab 0.89 EUR bis 1.01 EUR
 Hersteller: Vishay Semiconductors MOSFET 100V 27.5A 35.7W 
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auf Bestellung 8143 Stücke Lieferzeit 14-28 Tag (e) |
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SI7456CDP-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 100V 10.3A 8-Pin PowerPAK SO T/R
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 27.5A PPAK SO-8 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
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auf Bestellung 8972 Stücke Lieferzeit 21-28 Tag (e) |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 27.5A PPAK SO-8 Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Base Part Number: SI7456 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V Vgs (Max): ±20V
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auf Bestellung 6000 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 27.5A PPAK SO-8 Base Part Number: SI7456 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 5W (Ta), 35.7W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 50V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Rds On (Max) @ Id, Vgs: 23.5mOhm @ 10A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 27.5A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT)
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auf Bestellung 7478 Stücke Lieferzeit 21-28 Tag (e) |
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