auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7465DP-T1-E3 Vishay
Description: MOSFET P-CH 60V 3.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V.
Weitere Produktangebote SI7465DP-T1-E3 nach Preis ab 0.84 EUR bis 3.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI7465DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 648 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET -60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 161076 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 3.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V |
auf Bestellung 22909 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay | 10 SOP8 |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||
SI7465DP-T1-E3 Produktcode: 199543 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
|
|||||||||||||||||
SI7465DP-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 60V 3.2A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
SI7465DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Pulsed drain current: -25A Power dissipation: 3.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
SI7465DP-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5A; Idm: -25A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Pulsed drain current: -25A Power dissipation: 3.5W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |