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SI7478DP-T1-E3

SI7478DP-T1-E3 Vishay Siliconix


si7478dp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 7600 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.09 EUR
6000+ 2.98 EUR
Mindestbestellmenge: 3000
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Technische Details SI7478DP-T1-E3 Vishay Siliconix

Description: MOSFET N-CH 60V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V.

Weitere Produktangebote SI7478DP-T1-E3 nach Preis ab 3.32 EUR bis 8.01 EUR

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SI7478DP-T1-E3 SI7478DP-T1-E3 Hersteller : Vishay Siliconix si7478dp.pdf Description: MOSFET N-CH 60V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
auf Bestellung 11771 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.76 EUR
10+ 6.07 EUR
100+ 4.88 EUR
500+ 4.01 EUR
1000+ 3.32 EUR
Mindestbestellmenge: 4
SI7478DP-T1-E3 SI7478DP-T1-E3 Hersteller : Vishay Semiconductors si7478dp-1766238.pdf MOSFET 60V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 100 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.01 EUR
10+ 7.2 EUR
25+ 6.84 EUR
100+ 5.93 EUR
Mindestbestellmenge: 7
SI7478DP-T1-E3 Hersteller : VISHAY si7478dp.pdf SI7478DP-T1-E3 SMD N channel transistors
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