Technische Details SI7501DN-T1-E3 VISHAY
Description: MOSFET N/P-CH 30V 5.4A 1212-8, Packaging: Cut Tape (CT), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: N and P-Channel, Common Drain, Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A, Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual.
Weitere Produktangebote SI7501DN-T1-E3
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SI7501DN-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N/P-CH 30V 5.4A 8-Pin PowerPAK 1212 T/R |
Produkt ist nicht verfügbar |
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SI7501DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 5.4A 1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual |
Produkt ist nicht verfügbar |