SI7611DN-T1-GE3

SI7611DN-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 40V 18A 8-Pin PowerPAK 1212 T/R
si7611dn.pdf si7611dn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1801 Stücke
Lieferzeit 14-21 Tag (e)

72+ 2.27 EUR
81+ 1.95 EUR
82+ 1.87 EUR
104+ 1.41 EUR
250+ 1.24 EUR
500+ 1.1 EUR
1000+ 0.9 EUR

Technische Details SI7611DN-T1-GE3

Description: MOSFET P-CH 40V 18A 1212-8, Supplier Device Package: PowerPAK® 1212-8, Base Part Number: SI7611, Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 3.7W (Ta), 39W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Drain to Source Voltage (Vdss): 40V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI7611DN-T1-GE3 ab 0.9 EUR bis 2.27 EUR

SI7611DN-T1-GE3
Hersteller: VISHAY
Material: SI7611DN-T1-GE3 SMD P channel transistors
si7611dn.pdf si7611dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7611DN-T1-GE3
Hersteller: VISHAY
Material: SI7611DN-T1-GE3 SMD P channel transistors
si7611dn.pdf si7611dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7611DN-T1-GE3
SI7611DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -40V Vds 20V Vgs PowerPAK 1212-8
si7611dn-1765244.pdf
auf Bestellung 3235 Stücke
Lieferzeit 14-28 Tag (e)
SI7611DN-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 40V 18A 8-Pin PowerPAK 1212 T/R
si7611dn.pdf si7611dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7611DN-T1-GE3
SI7611DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
si7611dn.pdf
auf Bestellung 2556 Stücke
Lieferzeit 21-28 Tag (e)
SI7611DN-T1-GE3
SI7611DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 18A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Base Part Number: SI7611
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si7611dn.pdf
auf Bestellung 8902 Stücke
Lieferzeit 21-28 Tag (e)
SI7611DN-T1-GE3
SI7611DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 18A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 20V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Base Part Number: SI7611
si7611dn.pdf
auf Bestellung 2556 Stücke
Lieferzeit 21-28 Tag (e)