SI7615CDN-T1-GE3 Vishay Semiconductors
auf Bestellung 26269 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
42+ | 1.26 EUR |
48+ | 1.09 EUR |
100+ | 0.81 EUR |
500+ | 0.63 EUR |
1000+ | 0.47 EUR |
3000+ | 0.45 EUR |
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Technische Details SI7615CDN-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V.
Weitere Produktangebote SI7615CDN-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI7615CDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7615CDN-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SI7615CDN-T1-GE3 | Hersteller : Vishay | Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SI7615CDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Power dissipation: 21.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI7615CDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 4.5V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI7615CDN-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; 21.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -35A Power dissipation: 21.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±8V On-state resistance: 20.3mΩ Mounting: SMD Gate charge: 111nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |