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SI7623DN-T1-GE3

SI7623DN-T1-GE3 Vishay


si7623dn.pdf Hersteller: Vishay
Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2286 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
105+1.52 EUR
114+ 1.34 EUR
115+ 1.28 EUR
116+ 1.22 EUR
129+ 1.05 EUR
250+ 1 EUR
500+ 0.87 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 105
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Technische Details SI7623DN-T1-GE3 Vishay

Description: MOSFET P-CH 20V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V.

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SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay si7623dn.pdf Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
auf Bestellung 2286 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
84+1.89 EUR
85+ 1.8 EUR
86+ 1.72 EUR
106+ 1.34 EUR
250+ 1.27 EUR
500+ 1.03 EUR
1000+ 0.8 EUR
Mindestbestellmenge: 84
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay Semiconductors si7623dn.pdf MOSFET -20V Vds 12V Vgs PowerPAK 1212-8
auf Bestellung 2234 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.43 EUR
19+ 2.89 EUR
100+ 2.3 EUR
500+ 1.98 EUR
1000+ 1.65 EUR
3000+ 1.6 EUR
6000+ 1.52 EUR
Mindestbestellmenge: 16
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay Siliconix si7623dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
auf Bestellung 2740 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.14 EUR
100+ 2.44 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay si7623dn.pdf Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay si7623dn.pdf Trans MOSFET P-CH 20V 35A 8-Pin PowerPAK 1212 T/R
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 Hersteller : VISHAY si7623dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 SI7623DN-T1-GE3 Hersteller : Vishay Siliconix si7623dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
Produkt ist nicht verfügbar
SI7623DN-T1-GE3 Hersteller : VISHAY si7623dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 180nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -80A
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -35A
On-state resistance: 9mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar