SI7655ADN-T1-GE3

SI7655ADN-T1-GE3

Hersteller: VISHAY
Material: SI7655ADN-T1-GE3 SMD P channel transistors
si7655adn.pdf si7655adn.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen

Technische Details SI7655ADN-T1-GE3

Description: MOSFET P-CH 20V 40A 1212-8S, Base Part Number: SI7655, Package / Case: PowerPAK® 1212-8S, Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V, Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis SI7655ADN-T1-GE3 ab 0 EUR bis 0 EUR

SI7655ADN-T1-GE3
Hersteller: VISHAY
Material: SI7655ADN-T1-GE3 SMD P channel transistors
si7655adn.pdf si7655adn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7655ADN-T1-GE3
SI7655ADN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -20V Vds 12V Vgs PowerPAK 1212-8S
VISHS100161_1-2566156.pdf
auf Bestellung 4359 Stücke
Lieferzeit 14-28 Tag (e)
SI7655ADN-T1-GE3
SI7655ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
si7655adn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7655ADN-T1-GE3
SI7655ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A PPAK1212-8S
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
si7655adn.pdf
auf Bestellung 11 Stücke
Lieferzeit 21-28 Tag (e)
SI7655ADN-T1-GE3
SI7655ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 40A 1212-8S
Base Part Number: SI7655
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S (3.3x3.3)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
si7655adn.pdf
auf Bestellung 4617 Stücke
Lieferzeit 21-28 Tag (e)