SI7658ADP-T1-GE3 Vishay
Hersteller: VishaySI7658ADP-T1-GE3 Vishay MOSFETs Transistor N-CH 30V 36A 8-Pin PowerPAK SO EP T/R - Arrow.com
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.37 EUR |
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Technische Details SI7658ADP-T1-GE3 Vishay
Description: MOSFET N-CH 30V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 5.4W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V.
Weitere Produktangebote SI7658ADP-T1-GE3 nach Preis ab 1.82 EUR bis 6.79 EUR
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SI7658ADP-T1-GE3 | Hersteller : Vishay |
SI7658ADP-T1-GE3 Vishay MOSFETs Transistor N-CH 30V 36A 8-Pin PowerPAK SO EP T/R - Arrow.com |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7658ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V |
auf Bestellung 3144 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7658ADP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 5381 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7658ADP-T1-GE3 | Hersteller : Vishay |
SI7658ADP-T1-GE3 Vishay MOSFETs Transistor N-CH 30V 36A 8-Pin PowerPAK SO EP T/R - Arrow.com |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7658ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 36A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 2030 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7658ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 80A; 83W Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 110nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7658ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SI7658ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 80A; 83W Power dissipation: 83W Polarisation: unipolar Kind of package: reel; tape Gate charge: 110nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 60A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |