SI7726DN-T1-GE3

Si7726DN-T1-GE3

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Technische Details Si7726DN-T1-GE3

Description: MOSFET N-CH 30V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8.

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SI7726DN-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R
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SI7726DN-T1-GE3
SI7726DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V 35A 52W 9.5mohm @ 10V
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Lieferzeit 14-28 Tag (e)
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V 35A 52W 9.5mohm @ 10V
si7726dn-260494.pdf
auf Bestellung 3000 Stücke
Lieferzeit 14-28 Tag (e)
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
si7726dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® 1212-8
si7726dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7726DN-T1-GE3
SI7726DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power - Max: 52W
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
FET Type: MOSFET N-Channel, Metal Oxide
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 30V
si7726dn.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen