SI7726DN-T1-GE3
Si7726DN-T1-GE3
Hersteller:
Informationen zu Lagerverfügbarkeit und Lieferzeiten
25500 Stücke
25500 Stücke
Technische Details Si7726DN-T1-GE3
Description: MOSFET N-CH 30V 35A PPAK1212-8, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 2.6V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, Vgs (Max): ±20V, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Power Dissipation (Max): 3.8W (Ta), 52W (Tc), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8.
Preis Si7726DN-T1-GE3 ab 0 EUR bis 0 EUR
|
SI7726DN-T1-GE3 Hersteller: Vishay Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: Vishay Semiconductors MOSFET 30V 35A 52W 9.5mohm @ 10V
|
auf Bestellung 2879 Stücke  Lieferzeit 14-28 Tag (e) |
|
|
 Hersteller: Vishay / Siliconix MOSFET 30V 35A 52W 9.5mohm @ 10V
|
auf Bestellung 3000 Stücke Lieferzeit 14-28 Tag (e) |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35A PPAK1212-8 Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35A 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V FET Type: MOSFET N-Channel, Metal Oxide Supplier Device Package: PowerPAK® 1212-8
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
|
Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35A 1212-8 Supplier Device Package: PowerPAK® 1212-8 Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Power - Max: 52W Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA FET Type: MOSFET N-Channel, Metal Oxide Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 30V
|
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|