SI7738DP-T1-E3 Vishay Semiconductors
auf Bestellung 3000 Stücke:
Lieferzeit 617-631 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.38 EUR |
| 10+ | 6.21 EUR |
| 25+ | 6.03 EUR |
| 100+ | 5.02 EUR |
| 250+ | 4.86 EUR |
| 500+ | 4.47 EUR |
| 1000+ | 3.82 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI7738DP-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 150V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V, Power Dissipation (Max): 5.4W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V.
Weitere Produktangebote SI7738DP-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI7738DP-T1-E3 |
 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|||
 |
SI7738DP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 30A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
|
 |
SI7738DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 60A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 60A Power dissipation: 62W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
SI7738DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 30A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V |
Produkt ist nicht verfügbar |
|
|
|
SI7738DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 7.7A, 10V Power Dissipation (Max): 5.4W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V |
Produkt ist nicht verfügbar |
|
|
|
SI7738DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 60A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 60A Power dissipation: 62W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |