SI7772DP-T1-GE3
verfügbar/auf Bestellung
auf Bestellung 2968 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2968 Stücke
Lieferzeit 14-28 Tag (e)
Technische Details SI7772DP-T1-GE3
Description: MOSFET N-CH 30V 35.6A PPAK SO-8, Base Part Number: SI7772, Package / Case: PowerPAK® SO-8, Supplier Device Package: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc), Drain to Source Voltage (Vdss): 30V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.
Preis SI7772DP-T1-GE3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8 Base Part Number: SI7772 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Vishay Siliconix 
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8 Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel
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auf Bestellung 2242 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 30V 35.6A PPAK SO-8 Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Vishay Siliconix Base Part Number: SI7772 Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 3.9W (Ta), 29.8W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1084pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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auf Bestellung 2261 Stücke Lieferzeit 21-28 Tag (e) |
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