SI7788DP-T1-GE3

SI7788DP-T1-GE3

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si7788dp.pdf
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Technische Details SI7788DP-T1-GE3

Description: MOSFET N-CH 30V 50A PPAK SO-8, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 69W, Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V, Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Drain to Source Voltage (Vdss): 30V, FET Type: MOSFET N-Channel, Metal Oxide.

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SI7788DP-T1-GE3
Hersteller: VISHAY
0828+
si7788dp.pdf
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SI7788DP-T1-GE3
SI7788DP-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 30V 50A 69W 3.1mohm @ 10V
VISH_S_A0000186245_1-2566774.pdf
auf Bestellung 3096 Stücke
Lieferzeit 14-28 Tag (e)
SI7788DP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET 30V 50A 69W 3.1mohm @ 10V
si7788dp-244604.pdf
auf Bestellung 4315 Stücke
Lieferzeit 14-28 Tag (e)
SI7788DP-T1-GE3
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
si7788dp.pdf
auf Bestellung 3000 Stücke
Lieferzeit 21-28 Tag (e)
SI7788DP-T1-GE3
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
si7788dp.pdf
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)
SI7788DP-T1-GE3
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Power - Max: 69W
Input Capacitance (Ciss) (Max) @ Vds: 5370pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
FET Type: MOSFET N-Channel, Metal Oxide
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
si7788dp.pdf
auf Bestellung 6870 Stücke
Lieferzeit 21-28 Tag (e)