SI7810DN-T1-GE3

SI7810DN-T1-GE3

SI7810DN-T1-GE3

Hersteller: Vishay
Trans MOSFET N-CH 100V 3.4A 8-Pin PowerPAK 1212 T/R
70689.pdf
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Technische Details SI7810DN-T1-GE3

Description: MOSFET N-CH 100V 3.4A PPAK1212-8, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs (Max): ±20V, Power Dissipation (Max): 1.5W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® 1212-8, Package / Case: PowerPAK® 1212-8, Base Part Number: SI7810.

Preis SI7810DN-T1-GE3 ab 0 EUR bis 0 EUR

SI7810DN-T1-GE3
Hersteller:

70689.pdf 70689.pdf
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SI7810DN-T1-GE3
SI7810DN-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
70689-1765116.pdf
auf Bestellung 39859 Stücke
Lieferzeit 14-28 Tag (e)
SI7810DN-T1-GE3
SI7810DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
70689.pdf
auf Bestellung 1440 Stücke
Lieferzeit 21-28 Tag (e)
SI7810DN-T1-GE3
SI7810DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A PPAK1212-8
Manufacturer: Vishay Siliconix
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 1.5W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: SI7810
70689.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI7810DN-T1-GE3
SI7810DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A 1212-8
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Rds On (Max) @ Id, Vgs: 62mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 100V
FET Type: MOSFET N-Channel, Metal Oxide
70689.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen