SI7820DN-T1-E3 Vishay Semiconductors
auf Bestellung 7830 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.8 EUR |
| 16+ | 3.43 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.25 EUR |
| 1000+ | 2.13 EUR |
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Technische Details SI7820DN-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 200V 1.7A PPAK1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V.
Weitere Produktangebote SI7820DN-T1-E3 nach Preis ab 1.98 EUR bis 4.03 EUR
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SI7820DN-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 200V 1.7A PPAK1212-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7820DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 2.6A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7820DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 1.7A PPAK1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
Produkt ist nicht verfügbar |
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| SI7820DN-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 2.6A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A |
Produkt ist nicht verfügbar |