SI7850ADP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 60V 10.3A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 1.21 EUR |
| 6000+ | 1.15 EUR |
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Technische Details SI7850ADP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 10.3A/12A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V.
Weitere Produktangebote SI7850ADP-T1-GE3 nach Preis ab 1.28 EUR bis 2.91 EUR
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SI7850ADP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 13400 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7850ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 10.3A/12A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 35.7W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 30 V |
auf Bestellung 6735 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7850ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 10.3A 8-Pin PowerPAK SO EP T/R |
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| SI7850ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 35.7W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7850ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 35.7W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Drain-source voltage: 60V Drain current: 12A On-state resistance: 25mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |