SI7858ADP-T1-E3
Technische Details SI7858ADP-T1-E3
Description: MOSFET N-CH 12V 20A PPAK SO-8, Manufacturer: Vishay Siliconix, Packaging: Tape & Reel (TR), Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V, Vgs (Max): ±8V, Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V, Power Dissipation (Max): 1.9W (Ta), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Supplier Device Package: PowerPAK® SO-8, Package / Case: PowerPAK® SO-8, Base Part Number: SI7858.
Preis SI7858ADP-T1-E3 ab 0 EUR bis 0 EUR
 Hersteller: Vishay Trans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R 
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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SI7858ADP-T1-E3 Hersteller: VISHAY 09+
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518 Stücke |
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SI7858ADP-T1-E3 Hersteller: Vishay SI7858ADP-T1-E3 Vishay MOSFETs Transistor N-CH 12V 20A 8-Pin PowerPAK SO T/R - Arrow.com
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay / Siliconix MOSFET 12V 29A 0.0026Ohm
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auf Bestellung 2899 Stücke  Lieferzeit 14-28 Tag (e) |
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SI7858ADP-T1-E3 Hersteller: Vishay SI7858ADP-T1-E3 Vishay MOSFETs Transistor N-CH 12V 20A 8-Pin PowerPAK SO T/R - Arrow.com
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 20A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SI7858
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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 Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 20A PPAK SO-8 Power Dissipation (Max): 1.9W (Ta) Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V Vgs (Max): ±8V Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Package / Case: PowerPAK® SO-8 Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drain to Source Voltage (Vdss): 12V Technology: MOSFET (Metal Oxide) Part Status: Active FET Type: N-Channel Supplier Device Package: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ)
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auf Bestellung 3153 Stücke Lieferzeit 21-28 Tag (e) |
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Hersteller: Vishay Siliconix Description: MOSFET N-CH 12V 20A PPAK SO-8 Manufacturer: Vishay Siliconix Packaging: Cut Tape (CT) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 5700pF @ 6V Power Dissipation (Max): 1.9W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8 Base Part Number: SI7858
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auf Bestellung 878 Stücke Lieferzeit 21-28 Tag (e) |
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