SI7858ADP-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 12V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 2.83 EUR |
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Technische Details SI7858ADP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 6 V.
Weitere Produktangebote SI7858ADP-T1-E3 nach Preis ab 2.98 EUR bis 6.4 EUR
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SI7858ADP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 12V 20A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 29A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 6 V |
auf Bestellung 5150 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7858ADP-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI7858ADP-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 518 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7858ADP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 12V 20A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SI7858ADP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Polarisation: unipolar Mounting: SMD Pulsed drain current: 60A Power dissipation: 5.4W Gate charge: 80nC Technology: TrenchFET® Drain current: 29A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 3.7mΩ Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI7858ADP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Polarisation: unipolar Mounting: SMD Pulsed drain current: 60A Power dissipation: 5.4W Gate charge: 80nC Technology: TrenchFET® Drain current: 29A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 3.7mΩ |
Produkt ist nicht verfügbar |