auf Bestellung 366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 114+ | 1.4 EUR |
| 115+ | 1.33 EUR |
| 116+ | 1.27 EUR |
| 125+ | 1.13 EUR |
| 250+ | 0.88 EUR |
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Technische Details SI7892BDP-T1-E3 Vishay
Description: MOSFET N-CH 30V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.
Weitere Produktangebote SI7892BDP-T1-E3 nach Preis ab 0.84 EUR bis 5.07 EUR
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SI7892BDP-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 366 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7892BDP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7892BDP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 8905 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7892BDP-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 25A 0.0042Ohm |
auf Bestellung 5264 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI7892BDP-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 8043 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7892BDP-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |