SI7892BDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 1581 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 4.39 EUR |
| 10+ | 3.65 EUR |
| 100+ | 2.9 EUR |
| 500+ | 2.45 EUR |
| 1000+ | 2.08 EUR |
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Technische Details SI7892BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V.
Weitere Produktangebote SI7892BDP-T1-GE3 nach Preis ab 3.2 EUR bis 5.07 EUR
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SI7892BDP-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 2793 Stücke: Lieferzeit 14-28 Tag (e) |
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7892BDP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 15A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SI7892BDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 5W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 25A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7892BDP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 15A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SI7892BDP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 60A; 5W Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Power dissipation: 5W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 60A Drain-source voltage: 30V Drain current: 25A On-state resistance: 5.7mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |