SI7913DN-T1-GE3

Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2811 Stücke
Lieferzeit 14-28 Tag (e)
auf Bestellung 2811 Stücke

Lieferzeit 14-28 Tag (e)
Technische Details SI7913DN-T1-GE3
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8, FET Feature: Logic Level Gate, FET Type: 2 P-Channel (Dual), Power - Max: 1.3W, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 20V, Supplier Device Package: PowerPAK® 1212-8 Dual, Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).
Preis SI7913DN-T1-GE3 ab 2.73 EUR bis 4.55 EUR
SI7913DN-T1-GE3 Hersteller: Vishay / Siliconix MOSFET -20V Vds 8V Vgs PowerPAK 1212-8 ![]() |
auf Bestellung 7930 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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SI7913DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8 FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 20V Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) ![]() |
auf Bestellung 6000 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI7913DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8 Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual ![]() |
auf Bestellung 7489 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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SI7913DN-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET 2P-CH 20V 5A PPAK 1212-8 Drain to Source Voltage (Vdss): 20V FET Feature: Logic Level Gate FET Type: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 1.3W Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A Supplier Device Package: PowerPAK® 1212-8 Dual Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount ![]() |
auf Bestellung 7489 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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