SI7913DN-T1-GE3

SI7913DN-T1-GE3

SI7913DN-T1-GE3

Hersteller: Vishay Semiconductors
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
VISH_S_A0000765390_1-2566952.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2811 Stücke
Lieferzeit 14-28 Tag (e)
12+ 4.55 EUR
13+ 4.11 EUR
100+ 3.3 EUR
500+ 2.73 EUR

Technische Details SI7913DN-T1-GE3

Description: MOSFET 2P-CH 20V 5A PPAK 1212-8, FET Feature: Logic Level Gate, FET Type: 2 P-Channel (Dual), Power - Max: 1.3W, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 20V, Supplier Device Package: PowerPAK® 1212-8 Dual, Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ).

Preis SI7913DN-T1-GE3 ab 2.73 EUR bis 4.55 EUR

SI7913DN-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8
72615-241312.pdf
auf Bestellung 7930 Stücke
Lieferzeit 14-28 Tag (e)
SI7913DN-T1-GE3
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
72615.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI7913DN-T1-GE3
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
72615.pdf
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)
SI7913DN-T1-GE3
SI7913DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 5A PPAK 1212-8
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.3W
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: PowerPAK® 1212-8 Dual
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
72615.pdf
auf Bestellung 7489 Stücke
Lieferzeit 21-28 Tag (e)