SI7922DN-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 1.8A 1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 2985 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.6 EUR |
10+ | 4.12 EUR |
100+ | 3.31 EUR |
500+ | 2.72 EUR |
1000+ | 2.26 EUR |
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Technische Details SI7922DN-T1-E3 Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A 1212-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 1.8A, Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8 Dual, Part Status: Active.
Weitere Produktangebote SI7922DN-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI7922DN-T1-E3 | Hersteller : Vishay / Siliconix | MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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SI7922DN-T1-E3 | Hersteller : VISHAY |
auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7922DN-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 3938 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7922DN-T1-E3 Produktcode: 149546 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SI7922DN-T1-E3 | Hersteller : VISHAY | SI7922DN-T1-E3 SMD N channel transistors |
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SI7922DN-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 100V 1.8A 1212-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
Produkt ist nicht verfügbar |