Si7972DP-T1-GE3 Vishay Semiconductors
auf Bestellung 28259 Stücke:
Lieferzeit 866-880 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
21+ | 2.6 EUR |
23+ | 2.31 EUR |
100+ | 1.81 EUR |
500+ | 1.58 EUR |
1000+ | 1.34 EUR |
3000+ | 1.13 EUR |
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Technische Details Si7972DP-T1-GE3 Vishay Semiconductors
Description: MOSFET 2 N-CH 30V POWERPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 22W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V, Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual.
Weitere Produktangebote Si7972DP-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI7972DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SI7972DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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Si7972DP-T1-GE3 | Hersteller : VISHAY | SI7972DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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Si7972DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 30V POWERPAK SO8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 22W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |
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Si7972DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2 N-CH 30V POWERPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 22W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
Produkt ist nicht verfügbar |