SI8424CDB-T1-E1 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
Description: MOSFET N-CH 8V 4MICROFOOT
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 4-Microfoot
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.43 EUR |
22+ | 1.21 EUR |
100+ | 0.84 EUR |
500+ | 0.66 EUR |
1000+ | 0.53 EUR |
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Technische Details SI8424CDB-T1-E1 Vishay Siliconix
Description: MOSFET N-CH 8V 4MICROFOOT, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 4-Microfoot, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V.
Weitere Produktangebote SI8424CDB-T1-E1 nach Preis ab 0.53 EUR bis 1.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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SI8424CDB-T1-E1 | Hersteller : Vishay Semiconductors | MOSFET 8V Vds 5V Vgs MICRO FOOT 1.6 x 1.6 |
auf Bestellung 18001 Stücke: Lieferzeit 14-28 Tag (e) |
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SI8424CDB-T1-E1 | Hersteller : Vishay | Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI8424CDB-T1-E1 | Hersteller : VISHAY |
Description: VISHAY - SI8424CDB-T1-E1 - Leistungs-MOSFET, n-Kanal, 8 V, 10 A, 0.015 ohm, MICRO FOOT, Oberflächenmontage SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : VISHAY |
Description: VISHAY - SI8424CDB-T1-E1 - Leistungs-MOSFET, n-Kanal, 8 V, 10 A, 0.015 ohm, MICRO FOOT, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 8 Dauer-Drainstrom Id: 10 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.7 Bauform - Transistor: MICRO FOOT Anzahl der Pins: 4 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.015 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 800 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : VISHAY |
Description: VISHAY - SI8424CDB-T1-E1 - Leistungs-MOSFET, n-Kanal, 8 V, 10 A, 0.015 ohm, MICRO FOOT, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 8 Dauer-Drainstrom Id: 10 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 2.7 Bauform - Transistor: MICRO FOOT Anzahl der Pins: 4 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.015 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 800 SVHC: No SVHC (19-Jan-2021) |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 10A; Idm: 25A; 1.8W Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 25A Drain-source voltage: 8V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : Vishay | Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : Vishay | Trans MOSFET N-CH 8V 10A 4-Pin Micro Foot T/R |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 8V 4MICROFOOT Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 2A, 4.5V Power Dissipation (Max): 1.1W (Ta), 2.7W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 4-Microfoot Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI8424CDB-T1-E1 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 10A; Idm: 25A; 1.8W Mounting: SMD Case: MICROFOOT® 1.6x1.6 Kind of package: reel; tape Power dissipation: 1.8W Polarisation: unipolar Gate charge: 40nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 25A Drain-source voltage: 8V Drain current: 10A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |