SI8447DB-T2-E1

SI8447DB-T2-E1

SI8447DB-T2-E1

Hersteller: Vishay / Siliconix
MOSFET 20V 11A 13W 75mohm @ 4.5V
si8447db-260462.pdf
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Technische Details SI8447DB-T2-E1

Description: MOSFET P-CH 20V 11A 6MICRO FOOT, Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V, Part Status: Obsolete, Supplier Device Package: 6-Micro Foot™ (1.5x1), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 2.77W (Ta), 13W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-UFBGA, Packaging: Tape & Reel (TR).

Preis SI8447DB-T2-E1 ab 0 EUR bis 0 EUR

SI8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A MICROFOOT
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Package / Case: 6-MICRO FOOT™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 13W
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
si8447db.pdf
auf Bestellung 165 Stücke
Lieferzeit 21-28 Tag (e)
SI8447DB-T2-E1
SI8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
si8447db.pdf
auf Bestellung 135 Stücke
Lieferzeit 21-28 Tag (e)
SI8447DB-T2-E1
SI8447DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 11A 6MICRO FOOT
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.7V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 2.77W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UFBGA
Packaging: Tape & Reel (TR)
si8447db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen