SI8465DB-T2-E1

SI8465DB-T2-E1

SI8465DB-T2-E1

Hersteller: Vishay / Siliconix
MOSFET 20V 3.8A 1.8W 104mohm @ 4.5V
si8465db-256505.pdf
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Technische Details SI8465DB-T2-E1

Description: MOSFET P-CH 20V 4MICROFOOT, Base Part Number: SI8465, Part Status: Discontinued at Digi-Key, Packaging: Cut Tape (CT), Manufacturer: Vishay Siliconix, Package / Case: 4-XFBGA, CSPBGA, Supplier Device Package: 4-Microfoot, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 780mW (Ta), 1.8W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V, Vgs (Max): ±12V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel.

Preis SI8465DB-T2-E1 ab 0 EUR bis 0 EUR

SI8465DB-T2-E1
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±12V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Manufacturer: Vishay Siliconix
Base Part Number: SI8465
si8465db.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI8465DB-T2-E1
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4MICROFOOT
Base Part Number: SI8465
Part Status: Discontinued at Digi-Key
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-Microfoot
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 780mW (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104mOhm @ 1.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
si8465db.pdf
auf Bestellung 565 Stücke
Lieferzeit 21-28 Tag (e)
SI8465DB-T2-E1
SI8465DB-T2-E1
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V MICROFOOT
Supplier Device Package: 4-Microfoot
Package / Case: 4-XFBGA, CSPBGA
Mounting Type: Surface Mount
Power - Max: 780mW
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 104 mOhm @ 1.5A, 4.5V
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Operating Temperature: -55°C ~ 150°C (TJ)
si8465db.pdf
auf Bestellung 600 Stücke
Lieferzeit 21-28 Tag (e)